トップ›研究者を探す›希釈窒化物半導体光源を用いた誘電体ロッド型フォトニック結晶レーザの創出

希釈窒化物半導体光源を用いた誘電体ロッド型フォトニック結晶レーザの創出

KAKEN 科学研究費助成事業データベース で見る
研究課題番号 KAKENHI-PROJECT-23686004
研究種目 若手研究(A)
研究分野 理工系
工学
応用物理学・工学基礎
応用物性・結晶工学
研究機関 愛媛大学
大阪大学
代表研究者 石川 史太郎
研究期間 開始年月日 2011/4/1
研究期間 終了年度 2013
研究ステータス 完了 (2013/4/1)
配分額（合計） 26,650,000 (直接経費 :20,500,000、間接経費 :6,150,000)
配分額（履歴） 2013年度：5,460,000 (直接経費 :4,200,000、間接経費 :1,260,000)
2012年度：8,970,000 (直接経費 :6,900,000、間接経費 :2,070,000)
2011年度：12,220,000 (直接経費 :9,400,000、間接経費 :2,820,000)
キーワード 分子線エピタキシー
フォトニック結晶
ナノワイヤ
化合物半導体
希釈窒化物半導体
デルタドーピング
結晶成長

研究成果

[雑誌論文] Studying the formation of nitrogen d-doped layers on GaAs(001) using reflection high-energy electron diffraction

Norihisa Nishimoto, Masahiko Kondow, and Fumitaro Ishikawa 2014

[雑誌論文] Studying the formation of nitrogen d-doped layers on GaAs(001) using reflection high-energy electron diffraction

S. Nishimoto, M. Kondow, and F. Ishikawa 2014

[学会発表] Morphological and chemical properties of N delta-doped GaAs/(Al,Ga)As quantum wells

E. Luna, R. Gargallo-Caballero, S. Furuse, F. Ishikawa, A. Trampert 2013

[学会発表] 希釈窒化物半導体ナノワイヤのフォトニック結晶レーザー展開

石川史太郎 2013

[雑誌論文] Formation of minibands on superlattice structure with periodically arrangedδ-doped nitrogen into GaAs

K. Sumiya, M. Morifuji, Y. Oshima, and F. Ishikawa 2013

[雑誌論文] Over 1.5 µm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication

Y. Kitabayashi, M. Mochizuki, F. Ishikawa, and Ma. Kondow 2013

[学会発表] Formation of III-V semiconductor/oxide heterostructure nanowires on Si and their extention to buried entire structure

H. Hibi, N. Ahn, M. Kondow, M. Yamaguchi, F. Ishikawa 2013

[学会発表] Reflection High Energy Electron Diffraction Study for the Development of Nitrogen delta-doped Layer on GaAs(001) Surface

N. Nishimoto, M. Kondow, F. Ishikawa 2013

[雑誌論文] Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates

Y. Araki, M. Yamaguchi, and Fumitaro Ishikawa 2013

[雑誌論文] Effect of small microfabrication damage on optical characteristics of laser structure with GaInNAs quantum well

H. Goto, F. Ishikawa, M. Morifuji, and M. Kondow 2013

[学会発表] Wet Oxidation of GaAs/AlGaAs core-shell nanowire for the fabrication of oxide heterostructure nanowires

H. Hibi, N. Ahn, Y. Araki1, M. Kondow, M. Yamaguchi, F. Ishikawa 2013

[学会発表] Investigations on the Growth Mechanism of GaAs Nanowires on Si(111) : Impact of Growth Interruption, As and Ga flux, and Nitrogen Plasma Irradiation

N. Ahn, Y. Araki, H. Hibi, M. Kondow, M. Yamaguchi, F. Ishikawa 2013

[雑誌論文] Over 1.5m Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication

Y. Kitabayashi, M. Mochizuki, F. Ishikawa, and M. Kondow 2013

[学会発表] Introduction of Tensile-Strained Dilute Nitride Quantum Wells For Its Application to Dielectric-Rod Type Photonic Crystals

F. Ishikawa, H. Goto, M. Morifuji 2013

[雑誌論文] Effect of Small Microfabrication Damage on Optical Characteristics of Laser Structure with GaInNAs Quantum Well

Hiroaki Goto, Fumitaro Ishikawa, Masato Morifuji, and Masahiko Kondow 2013

[学会発表] Low-dimensional dilute nitride semiconductor heterostructures with delta-doping and nanowires

F. Ishikawa 2013

[雑誌論文] Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates

Y. Araki, M. Yamaguchi, F. Ishikawa 2013

[学会発表] GaAs-Related Heterostructure Nanowires with Nitrogen and Oxygen Formed on Si(111)

F. Ishikawa, H. Hibi, N. Ahn, Y. Araki, and M. Yamaguchi 2013

[雑誌論文] Characterization of the oxide film obtained by wet oxidation of Al-rich AlGaAs

Y. Hirai, T. Yamada, M. Kondow, F. Ishikawa 2012

[雑誌論文] Strain-induced composition limitation in nitrogenδ-doped (In,Ga)As/GaAs quantum wells

R. Gargallo Caballero, E. Luna, F. Ishikawa, A. Trampert 2012

[雑誌論文] Molecular beam epitaxial growth and characterization of nitrogen delta-doped AlGaAs/GaAs quantum wells

S. Furuse, K. Sumiya, M. Morifuji, and F. Ishikawa 2012

[雑誌論文] Strain-induced composition limitation in nitrogen δ-doped (In,Ga)As/GaAs quantum wells

R. Gargallo-Caballero, E. Luna, F. Ishikawa, and A. Trampert 2012

[雑誌論文] Molecular beam epitaxial growth and characterization of nitrogen delta-doped AlGaAs/GaAs quantum wells

S. Furuse, K. Sumiya, M. Morifuji, F. Ishikawa 2012

[学会発表] Epitaxial Growth of Dilute Nitride Semiconductor Nanostructures :δ-doping Quantum Structures and Nanowires

F. Ishikawa 2012

[雑誌論文] Nitrogen delta-doping for band engineering of GaAs-related quantum structures

F. Ishikawa, S. Furuse, K. Sumiya, A. Kinoshita, and M. Morifuji 2012

[雑誌論文] Band gap engineering with sub-monolayer nitrogen insertion into InGaAs/GaAs quantum well

F. Ishikawa, M. Morifuji, K. Nagahara, Uchiyama, K. Higashi, M. Kondow 2011

[学会発表] GaAs-Related Heterostructure Nanowires with Nitrogen and Oxygen Formed on Si(111)

F. Ishikawa, H. Hibi, N. Ahn, Y. Araki, and M. Yamaguchi

[学会発表] Unintentional Source Incorporation During Molecular Beam Epitaxy Induced by Gas Phase Scattering

F. Ishikawa and M. Kondow

[学会発表] フォトニック結晶作製に向けた高Al組成AlGaAsドライエッチングに関する研究

望月雅矢，石川史太郎，近藤正彦

[学会発表] Formation of III-V semiconductor/oxide heterostructure nanowires on Si and their extention to buried entire structure

Hideaki Hibi, Namsoo Ahn, Masahiko Kondow, Masahito Yamaguchi, Fumitaro Ishikawa

[学会発表] Si(111) 基板上GaAs ナノワイヤのMBE成長時窒素プラズマ照射効果

荒木義朗，後藤洋昭，石川史太郎

[学会発表] Strain-induced Composition Limitation in N δ-doped InGaAs Quantum Wells Grown by Molecular Beam Epitaxy

R. Gargallo Caballero, E. Luna, F. Ishikawa, and A. Trampert

[学会発表] 基板上GaAsナノワイヤのMBE成長と各種成長中断効果

安南洙，荒木義明，日比秀昭，石川史太郎，山口雅史

[学会発表] Effect of Plasma Processes on the Characteristics of GaAs Related Optical Device Structure

A. Watanabe, F. Ishikawa, M. Kondow

[学会発表] GaAsへの窒素デルタドープ層導入による超格子構造の作製と評価(2)

角谷健吾，森藤正人，大島義文，石川史太郎

[学会発表] Si(111)基板上GaAsNナノワイヤのMBE成長

荒木義朗，石川史太郎，山口雅史

[学会発表] Morphological and chemical properties of N delta-doped GaAs/(Al,Ga)As quantum wells

E. Luna, R. Gargallo-Caballero, S. Furuse, F. Ishikawa, and A. Trampert

[学会発表] Over 1.5 μm Deep Dry Etching of Al-rich AlGaAs for Photonic Crystal Fabrication

Y. Kitabayashi, M. Mochizuki, F. Ishikawa, M. Kondow

[学会発表] フォトニック結晶作製を目的とした高Al組成AlGaAs深掘ドライエッチング

北林佑太，望月雅也，石川史太郎，近藤正彦

[学会発表] Potential of GaInNAs for Its Application to Micro-fabrication Optical Devices

H. Goto, F. Ishikawa, M. Morifuji, and M. Kondow

[学会発表] GaAs（001）面上窒素δドープ層形成過程のRHEED解析

西本徳久，角谷健吾，石川史太郎

[学会発表] Low-dimensional dilute nitride semiconductor heterostructures with delta-doping and nanowires

Fumitaro Ishikawa

[学会発表] Impact of strain on the microstructure of N δ-doped (In,Ga)As quantum wells

R.Gargallo-Caballero1, E. Luna1, F. Ishikawa, A. Trampert

[学会発表] 化合物半導体水蒸気酸化による酸化物ヘテロ構造ナノワイヤの形成

日比秀昭，荒木義朗，安南洙，石川史太郎，山口雅史

[学会発表] Growth and characterization of delta-doped nitrogen/GaAs superlattice

K. Sumiya, M. Morifuji, Y. Oshima, and F. Ishikawa

[学会発表] GaAs系半導体の誘電体ロッド型フォトニック結晶作製技術の検討

後藤洋昭，森藤正人，石川史太郎

[学会発表] Reflection High Energy Electron Diffraction Study for the Development of Nitrogen delta-doped Layer on GaAs(001) Surface

N. Nishimoto, M. Kondow, and F. Ishikawa

[学会発表] Growth and characterization of GaAs/δ-doped nitrogen superlattice

K. Sumiya, M. Morifuji, Y. Oshima, F. Ishikawa

[学会発表] Annealing effect on (Ga,In)(N,As) investigated by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure

S. Fuyuno, F. Ishikawa, K. Higashi, A. Kinoshita, M. Morifuji, M. Kondow, H. Oji, J.-Y. Son, T. Honma, T. Uruga, and A. Trampert

[学会発表] Characterization of the Oxide Film Obtained by Wet Oxidation of AlxGa1-xAs with x=0.55-0.99

Y. Hirai,T. Yamada, M. Kondow, F. Ishikawa

[学会発表] Molecular beam epitaxial growth of GaAsN nanowire

F. Ishikawa and Y. Araki

[学会発表] Investigations on the Growth Mechanism of GaAs Nanowires on Si(111): Impact of Growth Interruption, As and Ga flux, and Nitrogen Plasma Irradiation

N. Ahn, Y. Araki, H. Hibi, M. Kondow, M. Yamaguchi, and F. Ishikawa

[学会発表] プラズマプロセスがGaAs系半導体光学素子構造諸特性に与える影響

渡辺章王，石川史太郎，近藤正彦

[学会発表] Characteristics of Nitrogen δ-doped AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy

S. Furuse, K. Sumiya, M. Morifuji, F. Ishikawa

[学会発表] Introduction of Tensile-Strained Dilute Nitride Quantum Wells For Its Application to Dielectric-Rod Type Photonic Crystals

Fumitaro Ishikawa, Hiroaki Goto and Masato Morifuji

[学会発表] GaInNAs の微細加工発光デバイス応用有効性の検討

後藤洋昭，石川史太郎，森藤正人，近藤正彦

[学会発表] Tight-binding study on electronic structure of GaNxAs1-x

A. Kinoshita, F. Ishikawa, and M. Morifuji

[学会発表] GaAsへの窒素δドープ層導入による超格子構造の作製と評価

角谷健吾，古瀬慎一朗，石川史太郎

[学会発表] Nitrogen delta-doping for band engineering of III-V semiconductors

F. Ishikawa, S. Furuse, K. Sumiya, A. Kinoshita, and M. Morifuji

[学会発表] Molecular Beam Epitaxial Growth of GaAsN Nanowire on Si(111) Substrate

Y. Araki, M. Yamaguchi, and F. Ishikawa

[学会発表] Wet Oxidation of GaAs/AlGaAs core-shell nanowire for the fabrication of oxide heterostructure nanowires

Hideaki Hibi, Namsoo Ahn, Yoshiaki Araki, Masahiko Kondow, Masahito Yamaguchi, Fumitaro Ishikawa

[学会発表] AlGaAs/GaAs量子井戸への窒素δ-ドープに関する研究

古瀬慎一朗，角谷健吾，石川史太郎

[学会発表] 高Al組成AlxGa1-xAs水蒸気酸化により形成したAlOx薄膜の光学的特性評価

平井裕一郎，山田高寛，近藤正彦，石川史太郎

[学会発表] GaAs(001) 面上窒素δドープ層形成過程のRHEED解析(2)

西本徳久，角谷健吾，石川史太郎

[学会発表] Epitaxial Growth of Dilute Nitride Semiconductor Nanostructures: δ-doping Quantum

Fumitaro　Ishikawa